Si衬底GaN基材料及器件的研究  

Study of GaN-Based Semiconductor Material and Device Grown on Si Substrate

作　　者：滕晓云[1] 刘彩池[1] 郝秋艳[1] 赵丽伟[1] 张帷[1] 

机构地区：[1]河北工业大学材料学院,天津300130

出　　处：《半导体技术》2006年第2期98-101,107,共5页Semiconductor Technology

基　　金：教育部新世纪优秀人才支持计划河北省自然科学基金资助项目(E2005000042)

摘　　要：GaN具有禁带宽、热导率高等特点,广泛应用于光电子和微电子器件领域。Si衬底GaN基材料及器件的研制将进一步促进GaN基器件与传统器件工艺的集成,因而具有很高的研究价值。介绍了Si衬底GaN基材料生长及特性方面的研究现状和GaN基器件的进展情况。Gallium nitride has been widely used in optoelectronic and microelectronic devices field because of its large, direct bandgap, high thermal stability, etc. The study of GaN-based semiconductor material and device grown on Si substrate allows future integration of GaN devices with the mature Si-based devices and technology. The investigation to the growth of GaN on Si and related quality characterization and the development of GaN-based device are summarized.

关 键 词：GAN SI衬底 外延生长 

分 类 号：TN316[电子电信—物理电子学]