硅片抗弯强度测试方法中小挠度问题研究  

STUDY ON LITTLE DEFLECTION IN MEASUREMENT OF FLEXURE STRENGTH FOR SILICON WAFER

作　　者：谢书银[1] 石志仪[1] 

机构地区：[1]中南工业大学应用物理与热能工程系

出　　处：《中南工业大学学报》1996年第2期231-233,共3页Journal of Central South University of Technology(Natural Science)

基　　金：国家技术监督局资助

摘　　要：推导了圆片冲击法测试硅片抗弯强度时最大挠度的计算公式．通过薄硅片抗弯强度的测试实验，对因不符合小找度假设产生的误差进行了实验校准，并研究了挠度、厚度比ω／δ与校准系数Ｋ的关系．结果表明，符合小挠度假设的范围是ω／δ≤１／７．The analytic expression was derived for maximum deflection in measurement of flexure strength for silicon wafer by wafer impact method. The deviation originated from diverging from little deflection was corrected by experiment and the relationship between the ratio of deflection to thichness of wafer and the correct factor K was also investigated.The result showed that the range in agreement with little deflection would be about ωδ/≤1/7.

关 键 词：抗弯强度 小挠度 硅片 测试法 

分 类 号：TN304.12[电子电信—物理电子学]