伪闭锁路径法的应用  

Application of the Pseudo-Latchup Path Method

作　　者：许献国[1] 徐曦[2] 胡健栋[1] 赵刚[2] 

机构地区：[1]北京邮电大学电信工程学院,北京100876 [2]中国工程物理研究院电子工程研究所,四川绵阳621900

出　　处：《微电子学》2006年第1期43-45,48,共4页Microelectronics

摘　　要：在研究体硅CMOS器件的闭锁窗口现象时,发现了一种新的抗闭锁方法———伪闭锁路径法。文章介绍了这种方法的基本原理,开发了一种抗闭锁电路实例。运用计算机仿真分析技术开发的抗闭锁电路,可以实现体硅CMOS器件的闭锁抑制。“闪光I”瞬时辐照试验表明,该抗闭锁电路的触发阈值剂量率很低,只有1.3×104Gy(Si)/s,能够成功抑制单片机系统的辐射感应闭锁。In studying latchup window phenomena in bulk-Si CMOS devices, a new method for prevention of latchup has been discovered, which is called pseudo-latchup path method. The principle of this method is described and a practical circuit for latehup prevention is developed. The circuit can be used to prevent latchup in conventional bulk-Si CMOS devices. An irradiation test based on ＂Shan-guang Ⅰ＂ transient radiation simulation device shows that the circuit has a very low triggering dose rate of 1.3×10^4Gy（Si）/s, and it can be used to prevent radiation induced latchup in a microprocessor system.

关 键 词：体硅 CMOS器件 闭锁 伪闭锁路径法 单片机 

分 类 号：O472[理学—半导体物理]