蓝宝石衬底片的精密加工  

Fine Polishing of Sapphire Substrates

作　　者：王娟[1] 刘玉岭[1] 檀柏梅[1] 李薇薇[1] 周建伟[1] 

机构地区：[1]河北工业大学微电子技术与材料研究所,天津300130

出　　处：《微电子学》2006年第1期46-48,共3页Microelectronics

基　　金：天津市重大攻关项目资助(043801211)

摘　　要：对SiO2磨料抛光蓝宝石衬底片进行了研究。结果表明,采用大粒径、高浓度的SiO2磨料抛光,可以获得良好的表面状态和较高的去除速率。抛光的适宜温度及pH值条件为:T=30℃;12.0>pH值≥9.0。并且,在抛光时应加入适量添加剂,方可获得较为理想的表面状态和较高的去除速率。实验同样证明,这种低成本、高质量的抛光除了可以应用于蓝宝石的抛光以外,还可以应用在其它一些硬质材料的抛光工艺中。The concept of chemical-mechanical polishing （CMP） was examined for finishing sapphire substrates, for which silica sols are also used. Experimental results show that best surface finish and efficient material removal can be achieved with abrasives in large particle size and high concetrantion, as well as proper amount of additives. Temperature and pH value suitable for polishing are 30 ℃ and 9.0, respectively. Good removal rate and surface finish with presumably low subsurface damage can be achieved by using this process. The results also indicate the potential for cost reduction and quality improvement in industrial finishing of sapphire and, perhaps, other hard materials.

关 键 词：蓝宝石 化学机械抛光 硅溶胶 SiO2磨料 

分 类 号：TN405[电子电信—微电子学与固体电子学]