N_2气氛下快速退火(RTA)对硅片氧沉淀密度和表面形貌的影响  

Effect of N_2 Rapid Thermal Annealing on Density of Oxygen Precipitated and Surface Topography Changes

作　　者：冯泉林[1] 周旗钢[1] 王敬[1] 刘斌[1] 刘佐星[1] 

机构地区：[1]北京有色金属研究总院有研半导体材料股份有限公司,北京100088

出　　处：《稀有金属》2005年第6期810-813,共4页Chinese Journal of Rare Metals

基　　金：国家863项目资助(2002AA3Z1110)

摘　　要：快速退火(RTA)单晶硅片时,硅片内部会形成一种特殊的空位分布。空位的分布将决定后序两步退火(800℃,4 h+1000℃,16 h)后生成的洁净区宽度和氧沉淀密度。研究了N2气氛下,不同RTA恒温时间对洁净区形成和氧沉淀密度的影响。发现延长RTA恒温时间,会增加氧沉淀密度。使用原子探针显微镜(原子力显微镜)研究了RTA后表面形貌的变化。发现在N2气氛下RTA处理过的硅片,表面微粗糙度略有增加。A non-uniform vacancy distribution would be formed thermal an when ealing the wafer was subjected to a rapid process, which will control the oxygen precipitates distribution in the following annealing process （800 ℃, 4 h ＋ 10000℃, 16 h）. It has be demonstrated that the denuded zone will shrink and oxygen precipitates density will increase when prolonging the RTA duration times in N2 ambient. Meanwhile, atomic force microscopy （AFM） were used to investigate the surface topography changes caused by RTA, it is showed that the surface micro-roughness would increase slightly after N2 RTA process.

关 键 词：硅抛光片 洁净区 氧沉淀 内吸杂 原子力显微镜 微粗糙度 

分 类 号：TN304.12[电子电信—物理电子学]