CVD法制备ZnS反应气体流动状态模拟  

Flowing Fiemd Si mulationin ZnS Processing by CVD

作　　者：汪飞琴[1] 苏小平[1] 霍承松[1] 

机构地区：[1]北京有色金属研究总院国晶辉红外光学科技有限公司,北京100088

出　　处：《稀有金属》2005年第6期819-822,共4页Chinese Journal of Rare Metals

摘　　要：介绍了采用化学气相沉积(CVD)技术制备ZnS的原理及特点,提出用气体流形模拟研究目前生长过程中沉积厚度均匀性、长时间沉积稳定性以及重复性等问题。选择了合适的描述沉积室内气体运动的流体力学和表面反应动力学模型,利用流体力学的偏微分方程组(Navier-Stokes方程组),通过数值计算,得到沉积室内的速度场及流动场的模拟结果。比较可得在一定流速比下,采用环形主气流及横截面小的沉积室,可大大提高沉积室纵向生长均匀性。The principle and characteristics of the technique of manufacturing ZnS by chemical vapor deposition was briefly introduced. A model that combines mass transport process and surface kinetics for gas flowing field in the synthesizing reactor was established Essential hypothesis and formulae were put forward. The hydrokinetics simulating result by numerical calculation and the conclusion were given.

关 键 词：化学气相沉积 ZNS 流体动力学模拟 流动场 

分 类 号：TN213[电子电信—物理电子学]