氧化对SOI基SiGe薄膜残余应变弛豫的影响  

Influence of Oxidation on Residual Strain Relaxation of SiGe Film Grown on SOI Substrate

作　　者：金波[1] 王曦[1] 陈静[1] 张峰[1] 程新利[1] 陈志君[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所,上海200050

出　　处：《Journal of Semiconductors》2006年第1期86-90,共5页半导体学报（英文版）

摘　　要：研究了氧化对外延在SOI衬底上的Si Ge薄膜的残余应变弛豫过程的影响.通过对Si Ge薄膜采用不同工艺的氧化,从而了解不同氧化条件对SOI基Si Ge薄膜的应变弛豫过程的影响.氧化将会促使Si Ge薄膜中的Ge原子扩散到SOI材料的顶层硅中.而Si Ge薄膜的残余应变弛豫过程将会与Ge原子的扩散过程同时进行.通过对Si Ge薄膜和SOI顶层硅中位错分布的分析发现在氧化过程中,Si Ge薄膜和SOI衬底之间存在一个应力传递的过程.The influence of oxidation on the relaxation of residual strain in SiGe films epitaxially grown on SOI substrate are studied. These samples are oxidized with different technologies for the purpose of studying the influence of different oxidation processes on the relaxation of residual strain in SiGe films. Oxidation driven Ge atoms diffuse from the SiGe film to the top silicon layer. There is residual strain in SiGe film relaxation processes with the diffusion of Ge atoms. We contrast the dislocation distribution in the SiGe film and the top silicon layer：there is a strain transfer process between the SiGe film and the top silicon layer during oxidation.

关 键 词：氧化 SIGE SOI 应变弛豫 

分 类 号：TN304[电子电信—物理电子学]