MOCVD法制备磷掺杂p型ZnO薄膜  

Growth of Phosphorus-Doped p-Type ZnO Thin Films by MOCVD

作　　者：周新翠[1] 叶志镇[1] 陈福刚[1] 徐伟中[1] 缪燕[1] 黄靖云[1] 吕建国[1] 朱丽萍[1] 赵炳辉[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《Journal of Semiconductors》2006年第1期91-95,共5页半导体学报（英文版）

基　　金：国家重点基础研究专项经费(批准号:G2000068306);国家自然科学基金(批准号:90201038)资助项目~~

摘　　要：利用金属有机化学气相沉积方法在玻璃衬底上生长了掺磷的p型ZnO薄膜.实验采用二乙基锌作为锌源,高纯氧气和五氧化二磷粉末分别作为氧源及磷掺杂源.实验表明生长温度为400～450℃时获得了p型ZnO薄膜,而且在420℃时,其电学性能最好,空穴浓度为1.61×1018cm-3,电阻率为4.64Ω.cm,迁移率为0.838cm2/(V.s).霍尔测试和低温光致发光谱证实了该ZnO薄膜的p型导电特性,并观察到薄膜位于3.354eV与中性受主束缚激子相关的发射峰.Phosphorus-doped p-type ZnO thin films are prepared on glass substrates by metalorganic chemical vapor deposition. DEZn,O2, and P2O5 powder are used as reactant and dopant sources. The p-type ZnO films are grown at a temperature between 400 and 450℃. The best p-type sample has a low resistivity of 4. 64Ω·cm, a hole concentration of 1.61 × 10^18 cm^-3 , and a Hall mobility of 0. 838cm^2/（V · s） at room temperature. A strong emission peak at 3.354eV corresponding to neutral acceptor bound excitons is observed at 77K in the photoluminescence spectra,further verifying the p-type characteristics of the films.

关 键 词：p-ZnO 金属有机化学气相沉积 磷掺杂 

分 类 号：TN304[电子电信—物理电子学]