金属有机化学气相沉积生长的GaN膜中V缺陷研究  

V Defects in GaN Films Grown by Metal-organic Chemical Vapor Deposition

作　　者：赵丽伟[1] 滕晓云[1] 郝秋艳[1] 朱军山[1] 张帷[1] 刘彩池[1] 

机构地区：[1]河北工业大学材料学院信息功能材料研究所,天津300130

出　　处：《液晶与显示》2006年第1期38-42,共5页Chinese Journal of Liquid Crystals and Displays

基　　金：教育部新世纪优秀人才支持计划;河北省自然科学基金资助项目(No.E2005000042)

摘　　要：利用金属有机化学气相沉积(MOCVD)技术,在Si(111)衬底上外延生长不同厚度的GaN。外延层薄的GaN表面存在大量的V缺陷,并且V缺陷的两侧有相互平行的带状高坡;外延层厚的GaN表面没有V缺陷,表面平整且晶体质量高。位错处存在晶格畸变,杂质易于在此处聚集,达到一定浓度就会抑制晶体在此处生长而形成V缺陷。受位错附近应力场与气流的影响,V缺陷两侧出现带状高坡。生长时间延长,GaN表面的V缺陷就会被填满,带状高坡横向生长合并成为平整的表面。用m(KOH)∶m(H2O)=1∶10的KOH溶液腐蚀后,平整的表面出现六角腐蚀坑,密度与原生坑密度相近,认为是原生坑被填满的位置腐蚀后再次出现。GaN film was grown on Si（111） using metal-organic chemical vapor deposition, two kinds of GaN films with different thickness were gotten. There were many V defects in the thin film, and strips which parallel to each other lied beside the V defects. The thick film, had a smooth surface, no pits appeared,and crystal quality was improved. There were lattice distortions in the dislocations, impurities concentrated here easily, V defects appeared on the dislocation sites. Influenced by the gas flow pattern and stress field near the dislocations, strip ribbons lied beside the V defects. Following the growth, V defects on GaN surface were filled in and strip ribbons grew and coalesced gradually, flat surface was obtained. Strip ribbon acted as the strip pattern of ELO GaN, the crystal quality was improved. After etching in KOH solution （m（KOH） ：m（H2O） = 1：10）, hexagonal etch pits were found on the smooth surface, its density is the same to V defects, which reflected that the hexagonal etch pits were the recurrence of V defects.

关 键 词：GAN V缺陷 湿法化学腐蚀 六角腐蚀坑 

分 类 号：TN304.055[电子电信—物理电子学]