MOCVD生长GaN的喇曼散射谱  

RAMAN SCATTERING SPECTRA OF GaN GROWN BY MOCVD

作　　者：童玉珍[1,2] 张国义[1,2] 徐自亮 党小忠[1,2] 王晶晶 金泗轩 王舒民[1,2] 刘弘度 

机构地区：[1]北京大学物理系 [2]介观物理国家重点实验室

出　　处：《红外与毫米波学报》1996年第1期6-10,共5页Journal of Infrared and Millimeter Waves

摘　　要：对在ＧａＡｓ（００１）、Ａｌ２Ｏ３（０００１）和Ｓｉ（１１１）等衬底上ＭＯＣＶＤ技术生长的ＧａＮ薄膜进行了背散射几何配置下的喇曼散射测试分析和比较，观察到了α相ＧａＮ的Ａ１（ＬＯ）模、Ａ１（ＴＯ）模、Ｅ１（ＬＯ）模和Ｅ２模．结合Ｘ射线衍射谱，分析了因不同生长工艺导致ＧａＮ／ＧａＡｓ样品的不同结构相的喇曼谱的差异，发现ＧａＮ的喇曼谱与ＧａＮ外延层的结构相、完整性及工艺条件有关，可利用其作为检测ＧａＮ外延层结构特性的一种有用手段．对含有少量β相ＧａＮ样品，观测到了包含有β相ＧａＮ贡献的声子模式（７４０ｃｍ－１）．Raman spectra in the backscattering geometry configurations of GaN grown by MOCVD with phenylhydrazine as nitrogen source on the substrate of GaAs(001),Al 2O 3(0001) and Si(111) were measured and compared.A1(LO),A1(TO), E1(LO), E1(TO) and E2 modes of α GaN were observed.In combination of X ray diffraction spectra,the difference of Raman scattering spectra of GaN with different structure phases due to varying growth process was analyzed.In the GaN sample with a small amount of β GaN phase,the phonon mode of frequency 740cm -1 ,which may come from β GaN, was also observed.There appeared three new scattering peaks in the Raman spectra of some GaN/GaAs samples. However,the reason is not clear and a possible explanation was given.

关 键 词：喇曼散射 MOCVD 氮化镓 砷化镓 薄膜 

分 类 号：TN304.22[电子电信—物理电子学] O47[理学—半导体物理]