织构金刚石薄膜的成核与生长  

NUCLEATION AND GROWTH PROCESS OF TEXTURED DIAMOND FILMS

作　　者：张文军[1] 韩立[1] 胡博 涨仿清 陈光华[1] 

机构地区：[1]兰州大学物理系

出　　处：《物理学报》1996年第1期88-93,共6页Acta Physica Sinica

摘　　要：在加衬底偏压和不加衬底偏压两种情况下，用微波等离子体化学汽相沉积（Ｍ３ＶＣＶＤ）技术在Ｓｉ（１００）衬底上合成了织构的金刚石薄膜使用扫描电子显微镜（ＳＥＭ）和取向Ｘ射线衍射技术证实了我们得到的样品是织构的金刚石薄膜观察了织构的金刚石薄膜的成核和生长过程。Textured diamond films were depsited on (100 ) Si substrates via microwave plasmaCVD (MWCVD) with bias - enhanced nucleation or without substrate bias. The sampleswere identified by means of scanning electron microscopy (SEM) and X ray diffraction(XRD) to be textured. The nucleation and growth process of textured diamond films wereinvestigated, the mechanism of nucleation and growth were discussed.

关 键 词：金刚石 薄膜 CVD 成核 

分 类 号：TN304.18[电子电信—物理电子学] TN304.055