微电子工艺中硅衬底的清洗技术  

Cleaning technology for silicon substrate in microelectronics

作　　者：张远祥[1] 刘玉岭[1] 袁育杰[1] 

机构地区：[1]河北工业大学微电子所,天津300130

出　　处：《清洗世界》2006年第2期29-33,共5页Cleaning World

基　　金：天津市重点自然科学基金(043801211)

摘　　要：通过研究硅片表面颗粒的吸附原理,提出了优先吸附模型,并提出改进SC-1的配方,不仅能去除颗粒,而且能有效去除有机物。介绍一些操作方法更加简单、去除更加彻底以及更加环保的清洗新技术。通过分析微电子技术的发展要求,指出今后硅片清洗工艺的发展趋势。The priority for absorption models and the improved prescription of SC - 1 were proposed through researching the principle of the absorption of particles on the silicon wafer surface. The improved SC - 1 can remove not only the particles but also the organic substance effectively. Some new silicon wafer cleaning technologies with easier operateing, more completely removal and well environmental protection were given. This article demonstrates the development trend of the technology of silicon wafer cleaning in the future through analyzing the demand for the development of microelectronics technology.

关 键 词：硅片 表面活性剂 微粗糙度 腐蚀 臭氧 

分 类 号：TN405[电子电信—微电子学与固体电子学]