Design and Simulation of a Light-Activated Darlington Transistor Based on a SiCGe/3C-SiC Hetero-Structure  

SiCGe/3C-SiC异质结光控达林顿晶体管的设计与仿真(英文)

作　　者：陈治明[1] 任萍[1] 蒲红斌[1] 

机构地区：[1]西安理工大学电子工程系,西安710048

出　　处：《Journal of Semiconductors》2006年第2期254-257,共4页半导体学报（英文版）

基　　金：国家自然科学基金(批准号:60376011,60576044);高等学校博士学科点专项科研基金(批准号:20040700001)资助项目~~

摘　　要：A light-activated Darlington heterojunction transistor based on a SiCGe/3C-SiC hetero-structure is proposed for anti-EMI（electromagnetic interference） applications. The performance of the novel power switch is simulated using ISE. In comparison with the switches based on other polytypes of SiC,the design benefits from having fewer lattice mismatches between the SiCGe and 3C-SiC. A maximum common emitter current gain of about 890 and superb light-activation characteristics may be achievable. The performance simulation demonstrates that the device has a good I-V characteristic with a turn-on voltage knee of about 4V.针对抗电磁干扰的需要提出了一种由SiCGe/3C-SiC异质结构成的光控达林顿晶体管设计.用多维器件模拟软件ISE对这种新型功率开关进行了特性仿真.结果表明,与采用其他结晶类型的碳化硅衬底相比,SiCGe与3C-SiC间较小的晶格失配有利于提高器件性能,可使其最大共射极电流增益达到890,获得最好的光触发特性和较好的I-V特性,饱和压降大约为4V.

关 键 词：SiCGe SIC hetero-junction Darlington transistor 

分 类 号：TN364[电子电信—物理电子学]