基本FFET的试制和性能研究  

On the Preparation and Properties of the Basic Ferroelectric Field Effect Transistor

作　　者：于军[1] 周文利[1] 曹广军[1] 谢基凡[1] 

机构地区：[1]华中理工大学固体电子学系

出　　处：《华中理工大学学报》1996年第3期68-70,共3页Journal of Huazhong University of Science and Technology

基　　金：国家863高技术资助

摘　　要：论述了铁电场效应晶体管（ＦＦＥＴ）的基本工作原理，给出了其设计方案．采用ＳＯＬ－ＧＥＬ法制备了基本的ＭＦＳ－ＦＥＴ和ＭＦＯＳ－ＦＥＴ，对其电性能进行了测试分析．测试结果表明：ＭＦＯＳ结构的ＦＦＥＴ具有极化存储特性．he working principle of the ferroelectric field effect transistor (FFET) is described with the design scheme given. FETs with M/F/S and M/F/O/S structures are prepared with the SOLGEL technique.The electrical properties are tested by C-V and I-V measurement. Measurement results show that the switching behavior of FFETs with M/F/O/S heterostructure exhibit a feature of the polarization-induced memory.

关 键 词：MFOS结构 FFET 场效应晶体管 铁电场效应器件 

分 类 号：TN386[电子电信—物理电子学]