MOCVD方法在Ti/Si(111)模板上生长ZnO薄膜的研究  

MOCVD Growth of ZnO Thin Films on Ti/Si(111) Templates

作　　者：李冬梅[1] 李璠[1] 苏宏波[1] 王立[1] 戴江南[1] 蒲勇[1] 方文卿[1] 江风益[1] 

机构地区：[1]南昌大学教育部发光材料与器件工程研究中心,南昌330047

出　　处：《人工晶体学报》2006年第1期63-65,70,共4页Journal of Synthetic Crystals

基　　金：国家863课题(No.2003AA302160);电子信息产业发展基金项目

摘　　要：本文采用常压MOCVD方法在Ti/S i(111)模板上生长了氧化锌(ZnO)薄膜,使用二乙基锌为Zn源,去离子水为O源。S i衬底上的Ti薄层采用电子束蒸发台蒸发,然后低温生长缓冲层并在高温下进行重结晶,接着在680℃进行ZnO薄膜的生长。采用粉末衍射法、双晶X射线衍射及光致发光技术研究了材料的取向、结晶性能及发光性能。结果表明,本文制备了高度择优取向和良好发光性能的ZnO薄膜。ZnO films were prepared by atmospheric-pressure MOCVD on Ti/Si （111 ）templates, with DEZn and deionized water as Zn precursors and O precursors, respectively. The Ti film on Si （ 111 ） was deposited by electron beam evaporation. The structural and optical properties were examined by single- crystal X-ray diffraction, double-crystal X-ray diffraction and photoluminescence. The XRD patterns indicate that as-grown ZnO films possess a hexagonal wurtzite structure with a highly-preferred orientation of （002）. The photoluminescence was measured at room temperature, and the band-edge emission was observed without obvious deeD-level peaks.

关 键 词：氧化锌 金属Ti SI衬底 金属有机化学气相沉积 

分 类 号：O484[理学—固体物理]