在n—InP(100)衬底上低温液相外延生长1.55μm GaInAsP双异质结构层的研究  

Study on Growth of 1.55μm GaInAsP Double Heterostructure by Low Temperature Liquid Phase Epitaxy on n-InP(100)Substrates

作　　者：邢启江[1] 王舒民[1] 陈娓兮[1] 章蓓[1] 王若鹏[1] 

机构地区：[1]北京大学物理系,北京100871

出　　处：《半导体光电》1990年第4期324-328,332,共6页Semiconductor Optoelectronics

摘　　要：在590℃温度下,不使用1.3μm GaInAsP 防回熔层,直接在 n-InP(100)衬底上液相外延生长出1.55μm InP/GaInAsP/InP 双异质结构外延片。对这种外延片的生长情况及其特性和 InP 衬底的热损伤情况,本文作了详细的分析和讨论。1.55μm InP/GaInAsP/InP double heterostructure wafers have been grown on n-InP(100)substrates by LPE at 590℃,without a 1.3μm GaInAsP an- timeltback layer.The quality and characterristics of the wafers are analyzed in de- tail,as well as thermal damage of the InP substrate.

关 键 词：GAINASP 异质结构 液相外延 n-InP 

分 类 号：TN248.404[电子电信—物理电子学]