GaAs/AlGaAs多量子阱结构的光吸收谱和横向光电流谱  

Absorption Spectra and Transverse Photocurrent Spectra of GaAs/AlGaAs Multiple Quantum Wells

作　　者：滕达 徐仲英[1] 庄蔚华[1] 王守武[1] 

机构地区：[1]中国科学院半导体研究所

出　　处：《Journal of Semiconductors》1990年第2期97-103,共7页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：研究了MBE GaAs/AlGaAs多量子阱结构的横向光电流谱和光吸收谱。在光电流谱中观测到多种允许和禁戒的激子吸收峰以及一个阱中受主态至n=1电子态的非本征吸收峰。确定出5个空穴子带至2个电子子带的跃迁以及这些子带的间距。采用简单带方势阱模型并取参数Q_c=0.6,m_c=0.0665,m_h=0.45和m_l=0.12的计算结果与实验数据符合得相当好。将光吸收谱与光荧光谱进行了比较。Transverse photocurrent spectra and absorption spectra of MBE GaAs/AlGaAs MQWshave been studied.The photocurrent spectra show various exciton peaks and an extrinsic absorptionfrom acceptor levels in the wells to the n=1 electron subband.From both allowed andforbidden transitions,two electron and five hole subbands are determined. Our data are inexcellent agreement with a square well calculation using Q_c=0.60, m_e=0.0665, m_h=0.45 andm-l=0.12. A comparison of absorption spectra with photoluminescence spectra has been made.

关 键 词：GAAS/ALGAAS 量子阱 光吸收谱 

分 类 号：O471.1[理学—半导体物理]