等电子杂质Sb对InP中缺陷的影响  

Influence of Isoelectronic Impurity Sb on Defects in InP

作　　者：叶式中[1] 杨保华[1] 徐岭 

机构地区：[1]中国科学院半导体研究所

出　　处：《Journal of Semiconductors》1990年第4期253-257,共5页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：用光致发光和正电子湮没技术研究了掺Sb InP单晶的“本征缺陷”。发现元素Sb的掺入导致磷空位(V_p)或者是V_p与杂质络合物的光致发光峰消失。用正电子湮没技术的测量也表明掺Sb的InP晶体中单空位浓度有所降低,两种方法测量的结果对应得很好。我们认为InP中掺Sb能有效地降低晶体中的本征缺陷。The native defect of InP crystals doped with Sb has been studied by means of PL and positronannihilation techniques. It is found that the V_p or V_p-impurity complex is responsible for thedisappearence of the luminescence band at 1.18 eV, Moreover,the lifetime spectra measurementsmanifest a reduction of the vacant type defect for Sb doped crystals.It is believed that the nativedefect of InP crystals can be effectively reduced by the introduction of Sb isoelectronic impurity.

关 键 词：INP SB 电子杂质 缺陷 正电子湮没 

分 类 号：TN304.23[电子电信—物理电子学]