Al_xGa_(1-x)As_ySb_(1-y)/GaSb的LPE生长与性质研究  

LPE Growth and Characterization of AlGaAsSb Epilayers

作　　者：杨保华[1] 王占国[1] 万寿科[1] 龚秀英[1] 林兰英[1] 

机构地区：[1]中科院半导体研究所

出　　处：《Journal of Semiconductors》1990年第10期738-745,共8页半导体学报（英文版）

基　　金：国家高技术;高技术基金

摘　　要：在GaSb衬底上用LPE法生长了晶格匹配的AlGaAsSb外延层。用室温光致发光和X射线双晶衍射分别测量了材料的禁带宽度和晶格常数,并与用内插法计算的结果进行了比较。用C-V和van der Pauw法测量了样品的电学参数。用激光喇曼散射和低温光致发光研究了材料的光学性质,观察到了类GaSb的LO模和类AlSb的LO模以及LO声子与等离子激元的耦合模L_-;对x=0.2,y=0.025的样品,由低温到室温的变温光致发光测量确定的禁带宽度的温度系数为-3.2×10^(-4)eV/K。此外对于晶格失配,P型的原因以及PL谱峰的展宽等问题进行了讨论。The lattice matched AlGaAsSb quaternary ep layers have been grown on GaSb substrates at 530℃ by LPE.The band gaps and lattice parameters of these layers are determined by room temperature photoluminescence and X-ray double crystal diffraction measurements, respectively. The electrical properties are assessed by C-V and Van der Pauw methods. In addition, laser Raman scattering and low temperature photoluminescence measurements were carried out. The GaSb-like LO mode, AlSb-like LO mode and the coupled mode between LO phonon and plasmon are observed;The temperature coefficient of the energy gap is determined to be -3.2×10^(-4)eV/K for epilayer with x=0.2, y=0.025.

关 键 词：LPE 化合物光导体 晶格匹配 

分 类 号：TN304.26[电子电信—物理电子学]