用喇曼光谱表征锗硅应变层超晶格  

Characterization of Ge-Si Strain-Layer Superlattice by Raman Scattering

作　　者：徐建国[1] 王建宝[1] 盛篪[1] 孙恒慧 郑思定[2] 姚文华[2] 

机构地区：[1]复旦大学物理系 [2]复旦大学测试中心

出　　处：《Journal of Semiconductors》1990年第11期822-828,共7页半导体学报（英文版）

摘　　要：对Ge_xSi_(1-x)/Si超晶格的喇曼光谱研究表明,这类样品中各层间的应力分配取决于缓冲层组分。合金层中的Ge—Si峰峰移δω随组分x或应变ε作线性变化。对Ge_n/Si_n(n为原子层数)超晶格的喇曼光谱研究表明,在n=4的超薄层超晶格中,锗硅界面互混程度较小,并发现样品的生长温度对其质量有决定性影响。Raman spectroscopy measurement shows that the stress distribution in Ge_xSi_(1-x)/Si superlatticeis determined by buffer layer composition, and the frequency shifts Oω of the Ge-Si vibrationmode in alloy layers vary linearly with the change of composition x or strain ε. On theother hand, in Ge_4/Si_4 ultrathin superlattice samples, it is found that the intermixing near layerinterface is small, and the growth temperature plays a key role in improving the quality ofsamples.

关 键 词：喇曼光谱 锗硅 应变层 超晶格 表征 

分 类 号：TN304.07[电子电信—物理电子学]