Cl_2/BCl_3ICP刻蚀GaN基LED的规律研究  

Study on the ICP Etching Regularity of GaN-Based LED with Cl_2/BCl_3

作　　者：宋颖娉[1] 郭霞[1] 艾伟伟[1] 董立闽[1] 沈光地[1] 

机构地区：[1]北京工业大学光电子实验室,北京100022

出　　处：《微纳电子技术》2006年第3期125-129,共5页Micronanoelectronic Technology

基　　金：国家基金(60506012);北京市教委(KZ200510005003);科技新星计划(2005A11);北京优秀人才计划(20051D0501502)

摘　　要：研究了用Cl2/BCl3刻蚀GaN基LED中,工艺参数对GaN刻蚀速率、刻蚀侧壁和GaN与SiO2刻蚀选择比的影响。研究结果表明,刻蚀速率随着ICP功率和压强的增大先增大继而减小,随RF功率的增大单调增大;刻蚀选择比随ICP功率增大单调减小,随压强增大而增大。还研究了刻蚀速率和选择比与气体比例变化的关系。刻蚀SEM图表明,压强和RF功率增大会使刻蚀垂直度增大。The etch regularity was achieved in GaN-LED etching with Cl2/BCl3. The etch parameters have much effect on etch rate of GaN and etch selectivity of GaN to SiO2. With the increasing of ICP power and pressure, the etch rate of GaN increases first and then decreases. The etch rate and etch selectivity increase monotonously with RF power. The selectivity decreases with ICP power. The effect of gas ratio was shown. The SEM results show that the etch verticality is better with pressure and RF power increasing.

关 键 词：感应耦合等离子体刻蚀 GaN 刻蚀速率 选择比 垂直度 

分 类 号：TN405.982[电子电信—微电子学与固体电子学] TN304.23