衬底温度对ZnO薄膜特性的影响  

The Structure and PL Spectrum of ZnO Thin Film on Different Substrate Temperatures

作　　者：郭茂田[1] 田臻锋[2] 陈兴科[2] 

机构地区：[1]中国科学院安徽光机所,合肥230031 [2]郑州大学物理工程学院

出　　处：《应用激光》2006年第1期26-28,共3页Applied Laser

摘　　要：用脉冲激光沉积(PLD)的方法制备ZnO薄膜。通过对薄膜的X射线衍射(XRD)测试,分析了不同衬底温度下薄膜的结晶状况;通过对薄膜的光致发光谱线的测试,分析了不同衬底温度下薄膜的光致发光状况,同时进行了薄膜表面结构的测试。结果显示,衬底温度为400℃的样品结晶质量较高,具有C轴的择优取向,同时发光性能达到相对优化。ZnO film has been fabricated by the pulsed laser deposition （PLD） technique. Under the different substrate temperature, samples were studied by X-ray diffraction （XRD）, the crystallization condition was analyzed, the PL（photolumineseenee）spectrum of the film was measured, the emission spectrum was showed ; And the SEM was measured. The result demonstrates, the crystallization quality of samples is higher at 400℃, The PL spectra of the film achieve the relative optimization.

关 键 词：脉冲激光沉积法 ZNO薄膜 衬底温度 

分 类 号：TN304.21[电子电信—物理电子学] O484.4[理学—固体物理]