开管扩锌InP的液结光伏谱和少子扩散长度  

Liquid Junction Photovoltage Spectra and Minority Carrier Diffusion Length in the Open-Zn-Diffused InP

作　　者：陈朝[1] 王健华[1] 

机构地区：[1]厦门大学物理系,清华大学电子工程系

出　　处：《固体电子学研究与进展》1996年第1期38-43,共6页Research & Progress of SSE

基　　金：国家教委留学回国人员研究经费项目;国家自然科学基金

摘　　要：用电化学液结方法测量了在４７０℃于氢气氛下开管扩锌ＩｎＰ样品的载流子浓度分布、不同深度的光伏谱和少于扩散长度。结果表明：在扩散区形成浓度为１０１７～１０１８ｃｍ－３较平坦的空穴分布；少于扩散长度由衬底的８～１０μｍ降至表面的０．２９μｍ以下；若轻微腐蚀去严重损伤的样品表层，将较大地提高新表层的少子扩散长度。The carrier concentration profiles,photovoltage spectra in different depth and minority carrier diffusion lengths of n-InP samples,into which zinc was open diffused at temperature of 470℃ in hydrogen atmosphere,have been measured by using electrochemical liquid junction method.The results show that more even hole distribution with 1017-1018cm-3 concentration was formed in the Zn-diffusion zone; minority carrier diffusion lengths from 8-10μm in the substrates was reduced to below 0.29 μm in the surface layer. If the seriously damaged surface of samples is slightly etched,then the minority carrier diffusion length in new surfcae layer will increase more greatly.

关 键 词：开管锌扩散 磷化铟 液结光伏谱 少子扩散长度 

分 类 号：TN305.4[电子电信—物理电子学]