GaAs、GaP、InP、InGaAsP、AlGaAs、InAlGaAs的化学腐蚀研究  

Study of Wet Chemical Etching for GaAs,GaP,InP,InGaAsP,AlGaAs and InAlGaAs

作　　者：许兆鹏[1] 

机构地区：[1]南京电子器件研究所

出　　处：《固体电子学研究与进展》1996年第1期56-63,共8页Research & Progress of SSE

摘　　要：为研制全集成光开关、微片式激光器等，对ＧａＡｓ、ＧａＰ、ＩｎＧａＡｓＰ、ＩｎＡＩＧａＡｓ、ＡｌＧａＡｓ等材料的化学腐蚀进行了实验研究。为了研制ＩｎＡｌＧａＡｓ／ＩｎＡｌＡｓ／ＩｎＡｌＧａＡｓ微片式激光器，开发了Ｈ３ＰＯ４／Ｈ２Ｏ２／Ｈ２Ｏ薄层腐蚀液和ＨＣｌ／Ｈ２Ｏ选择性腐蚀液；为了研制ＩｎＧａＡｓＰ／ＩｎＰ／ＩｎＧａＡｓＰＴｂａｒ型光波导，开发了ＨＣｌ／Ｈ３ＰＯ４／Ｈ２Ｏ２薄层腐蚀液和ＨＣｌ／Ｈ２Ｏ２选择性腐蚀液；为了研制ＧａＰ、ＩｎＧａＰ光波导，开发了ＨＣｌ／ＨＮＯ３／Ｈ２Ｏ薄层腐蚀液。它们都具有稳定、重复性好、速率可控、腐蚀后表面形貌好等特点。除此之外，蚀刻成的ＧａＰ光波导侧壁平滑无波纹起伏。此种结果尚未见报导。Experimental study of wet chemical etching of GaAs,GaP,InP,InGaAsP,InAlGaAs and AlGaAs tised for investigating of all-integrated optic switch and microdisk laser has been performed.In order to fabricate microdisk lasers,H3PO4/H2O2/H2O as a thin layer etchant for removal of InAlGaAs and HCl/H2O as a selective etchant for removal of InAlAs both from InAlGaAs have been developed.In order to fabricate T-bar waveguides,HCl/H3PO4/H2O2 as a thin layer etchant for removal of InGaAsP and HCl/H2O2 as a selective etchant for removal of Inp bothfrom InGaAsP have been developed.And HCl/HNO3/H2O as a thin layer etchant for GaP waveguides has been developed.All of etchants are stable and repeatable,and etching rates are controllable.The morphologies of etched surface are smooth.The sidewall of the GaP waveguides is very flatness without corrugation,this feature has not been reported yet.

关 键 词：磷化镓 磷化铟 砷化镓 化学腐蚀 

分 类 号：TN305.2[电子电信—物理电子学] TN305.2