MOS场效应晶体管辐照特性的实验研究  

Experimeatal Study on MOSFET under Irradiation Condition

作　　者：皇甫丽英[1] 金平[1] 勾秋静[1] 李冬梅[1] 

机构地区：[1]清华大学电子工程系,北京100084

出　　处：《实验技术与管理》2006年第3期38-40,共3页Experimental Technology and Management

摘　　要：通过对NMOS和PMOS场效应晶体管在^60coγ射线下的辐照实验，研究辐照对不同宽长比（W／L）及不同偏置电压下的MOS管的阈值电压及其转移特性的影响。实验证明辐照使MOS管的阈值电压负向漂移，辐照时非零栅源电压引起的MOS管阈值电压漂移明显大于零栅源电压情况，宽长比对阈值电压漂移量影响不大。Custom test chips including NMOS and PMOS devices were tested after irradiated by ^60coγ- ray . The threshold voltage shift induced by irradiation was studied based on the test results. Both NMOS and PMOS threshold voltages shifted negatively and the shifts were much lager when the device gates biased during irradiation than none biased. The difference of W/L showed no influence on the threshold voltage shift.

关 键 词：MOS器件 辐照效应 阈值电压漂移 宽长比 

分 类 号：TL81[核科学技术—核技术及应用]