MSOS电容器的研制及其C－V特性分析  

Preparation and Search of MSOS Capacitor and Its Analyses of C-V Characteristic

作　　者：龚道本[1] 

机构地区：[1]武汉中南民族学院物理系

出　　处：《中南民族学院学报（自然科学版）》1996年第1期7-11,共5页Journal of South-Central University for Nationalities(Natural Sciences)

摘　　要：在ＭＯＳ电容器的基础上提出了一种新型的电容器，它是由金属－非晶态半导体－氧化物－半导体４层结构组成的电容器，简称为ＭＳＯＳ电容器，用Ｃ－Ｖ仪画出了它的Ｃ－Ｖ特性曲线；并用能带模型对此特性进行了分析，该电容器的特性是通过控制外加电压Ｖ，可以改变其电容量Ｃ，且在Ｖ＝０值附近出现峰值Ｃｍａｘ．On the bases of MOS capacitor this paper has presented a kind of new capacitor with four layer structures which consists of Metal-Semiconductor-Oxide-Semiconductor, for short as MSOS capacitor; and we have drawn its C-V characteristic curve by C-V plotter;and we have analysed its C-V characteristic by energy band model. The capacitor has some characteristic that can change its capacitance C by control to applied voltage V, and the capacitance C has a peak Cmax near by V=0. The capacitor with this a characeristic was not found in literature.

关 键 词：MSOS电容器 耗尽层电容C C-V特性 压控电容器 

分 类 号：TM53[电气工程—电器]