不同化学镀液中p－Si上激光诱导局部沉积铜  

Laser-Induced Selective Deposition of Copper on p-Silicon Wafers

作　　者：姜贵凤 郁祖湛[1] 

机构地区：[1]复旦大学化学系

出　　处：《应用化学》1996年第2期18-21,共4页Chinese Journal of Applied Chemistry

基　　金：国家自然科学基金

摘　　要：在化学镀铜浴液中，ｐ－Ｓｉ片在彼长为５１４．５ｎｍ的激光束的照射下，得到了选择性的铜镀层．采用ＡＥｓ、ＳＥＭ、ＲＢＳ和电学技术对比了在３种含不同还原剂的镀液中得到的镀层的形貌、组成、界面扩散及电学性质；探讨了液相激光诱导化学沉积铜的机理．A process is described to selectively deposit thin copper films from electroless copper plating solutions on p-silicon wafers. The p-silicon was locally irradiated using a 5 W CW Ar+ laser. At the irradiated area,the copper film was formed.In this process.three kinds of thin copper films were obtained from the solutions containing different reductants. Composition and properties of the deposits were investigated using AES, SEM and RBS techniques.

关 键 词：化学镀铜 激光诱导沉积 化学沉积 铜 镀铜 

分 类 号：TQ153.14[化学工程—电化学工业]