新型兆声清洗去除集成电路衬底硅片表面污染物的分析研究  

Analysis and Research of New Megasonic Contamination Removal from Silicon Wafers

作　　者：李薇薇[1] 周建伟[1] 刘玉岭[1] 王娟[1] 

机构地区：[1]河北工业大学微电子研究所,天津300130

出　　处：《电子器件》2006年第1期124-126,133,共4页Chinese Journal of Electron Devices

基　　金：天津市重点基金项目资助(043801211)

摘　　要：集成电路衬底硅片表面存在污染物会严重影响器件可靠性,非离子表面活性剂能有效控制颗粒在硅单晶片表面的吸附状态,使之保持易清洗的物理吸附。在清洗液中加入特选的非离子表面活性剂,大大提高了兆声清洗去除颗粒的效率和效果。实验表明当活性剂在清洗液的配比为1%,颗粒去除率可达95%以上。The reliability of device will be affected greatly if there are contaminations on wafer surface. Nonionic surfactant can control adsorptive state of particles on Si wafers so that physical adsorption state can be kept. Efficiency and effect of particle removal can be improved, if specified nonionic surfactant is added to cleaning agent. Experiments has appoved that particle removal rate can attain 95%,when there is 1 % surfactant in cleaning agent.

关 键 词：兆声清洗 非离子表面活性剂 颗粒 吸附 

分 类 号：TN405[电子电信—微电子学与固体电子学]