Performance of a Self-Aligned InP/GaInAs SHBT with a Novel T-Shaped Emitter  

采用新的T型发射极技术的自对准InP/GaInAs单异质结双极晶体管的性能(英文)

作　　者：苏树兵[1] 刘训春[1] 刘新宇[1] 于进勇[1] 王润梅[1] 徐安怀[2] 齐鸣[1] 

机构地区：[1]中国科学院微电子研究所,北京100029 [2]中国科学院上海微系统与信息技术研究所,上海200050

出　　处：《Journal of Semiconductors》2006年第3期434-437,共4页半导体学报（英文版）

摘　　要：A self-aligned InP/GalnAs single heterojunction bipolar transistor（HBT） is investigated using a novel T-shaped emitter. A U-shaped emitter layout,selective wet etching,laterally etched undercut, and an air-bridge are applied in this process. The device, which has a 2μm×12μm U-shaped emitter area,demonstrates a common-emitter DC current gain of 170,an offset voltage of 0.2V,a knee voltage of 0.5V, and an open-base breakdown voltage of over 2V. The HBT exhibits good microwave performance with a current gain cutoff frequency of 85GHz and a maximum oscillation frequency of 72GHz, These results indicate that these InP/InGaAs SHBTs are suitable for low-voltage,low-power,and high-frequency applications.研究了一种采用新的T型发射极技术的自对准InP/GaInAs单异质结双极晶体管.采用了U型发射极图形结构、选择性湿法腐蚀、LEU以及空气桥等技术,成功制作了U型发射极尺寸为2μm×12μm的器件.该器件的共射直流增益达到170,残余电压约为0·2V,膝点电压仅为0·5V,而击穿电压超过了2V.器件的截止频率达到85GHz ,最大振荡频率为72GHz ,这些特性使此类器件更适合于低压、低功耗及高频方面的应用.

关 键 词：self-alignment emitters InP single heterojunction bipolar transistor T-shaped emitter U-shaped emitter layout 

分 类 号：TN322.8[电子电信—物理电子学]