半绝缘InP中深能级缺陷对电学性质的影响和缺陷的控制  

Influence of Deep Level Defects on Electrical Properties and Defect Control in Semi-Insulating InP

作　　者：赵有文[1] 董志远[1] 李成基[1] 段满龙[1] 孙文荣[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《Journal of Semiconductors》2006年第3期524-529,共6页半导体学报（英文版）

摘　　要：综合深能级缺陷和电学性质的测试结果,证明了半绝缘InP单晶材料的电学性能、热稳定性、均匀性等性能与材料中一些深能级缺陷的含量密切相关.通过分析深能级缺陷产生的规律与热处理及生长条件的关系,给出了抑制缺陷产生,提高材料质量的途径.对缺陷的属性与形成机理进行了分析讨论.By combining the measurement results of electrical properties and deep level defects, the electrical properties, thermal stability,and electrical uniformity of semi-insulating single crystal InP are demonstrated that they have a close correlation with the content of the deep level defects. An approach to improving the material quality is given through analysis of the dependence of the deep level defects on annealing and growth conditions. The formation mechanism and nature of the deep level defects are discussed.

关 键 词：磷化铟 半绝缘 缺陷 

分 类 号：TN304[电子电信—物理电子学]