Zn扩散工艺在降低VCSELp型DBR串联电阻中的应用  

Application of Zn diffusion in reducing the series resistance of p-DBR of VCSEL

作　　者：高洪海[1] 高俊华[1] 林世鸣[1] 康学军[1] 王红杰[1] 王立轩 

机构地区：[1]中科院半导体研究所

出　　处：《半导体光电》1996年第3期243-247,共5页Semiconductor Optoelectronics

基　　金：国家自然科学基金

摘　　要：垂直腔面发射激光器Ｐ型λ／４分布布喇格反射镜由于在ＡｌＡｓ／Ａｌ０．１Ｇａ０．９Ａｓ材料λ／４堆积层界面处存在大的势垒差，使得ｐ型ＤＢＲ串联电阻很大。文章报道一种利用Ｚｎ扩散工艺，使ＡｌＡｓ／Ａｌ０．１Ｇａ０．９Ａｓλ／４堆积层Ａｌ，Ｇａ互扩散，形成ＡｌｘＧａ１－ｘＡｓ混熔层或在界面处形成Ａｌ，Ｇａ组分渐变的ＡｌｘＧａ１－ｘＡｓ缓变层，从而降低ｐ型ＤＢＲ串联电阻的方法。利用这种方法。Due to the differences of the potential barriers at AlAs/Al 0.1 Ga 0.9 As hetero-interfaces of λ /4 stack layer in p-type λ /4 distributed Bragg reflector (p-DBR) of vertical cavity surface emitting lasers(VCSELs),p-DBR has very large series resistance.A method to reduce this series resistance by Zn diffusion is reported,which is that Al,Ga inter-diffusion in AlAs/Al 0.1 Ga 0.9 As λ /4 stack layer is carried out to form Al x Ga 1- x As mixed-melted layer,or to form Al x Ga 1- x As graded layer with Al,Ga component grading at the interface.By use of this method,room temperature CW VCSELs are successfully developed.

关 键 词：半导体器件 激光器 扩散 

分 类 号：TN305.4[电子电信—物理电子学] TN248.4