CF_4等离子处理在低温硅片直接键合中的应用  

Application of CF_4 Plasma Activation in Low Temperature Silicon Direct Bonding

作　　者：霍文晓[1] 徐晨[1] 杨道虹[1] 赵林林[1] 赵慧[1] 沈光地[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院北京市光电子技术实验室,北京100022

出　　处：《半导体技术》2006年第4期250-252,263,共4页Semiconductor Technology

基　　金：北京市教委基金资助项目(KM200310005009)

摘　　要：键合前用CF4等离子体对硅片表面进行处理,经亲水处理后,完成对硅片的预键合。再在N2保护下进行40h 300℃退火,获得硅片的低温直接键合。硅片键合强度达到了体硅的强度。实验表明,CF4对硅片的处理不仅可以激活表面,而且可以对硅片表面进行有效的抛光,大大加强了预键合的效果。Before bonding, the silicon wafers are pretreated with CF4 plasma and underwent hydrophilic treatment with RCA and DI water. Then complete bonding can be achieved by 40 h of annealing treatment at 300℃ in N2 ambient. The bonding strength is as strong as that of bulk silicon. The experiments show that CF4 treatment to silicon wafers can not only activate them but also polish their surfaces effectively, and it can improve the pre-bonding greatly.

关 键 词：微电子机械系统 低温 直接键合 等离子体 

分 类 号：TN305.96[电子电信—物理电子学]