多晶硅薄膜疲劳特性片外测试方法  

An out-chip method for measuring fatigue property of polysilicon thin film

作　　者：吴昊[1] 孟永钢[1] 苏才钧[1] 郭占社[1] 温诗铸[1] 

机构地区：[1]清华大学摩擦学国家重点实验室,北京100084

出　　处：《哈尔滨工业大学学报》2006年第4期592-594,656,共4页Journal of Harbin Institute of Technology

基　　金：国家自然科学基金重点资助项目(50135040);国家重点基础研究规划资助项目(2003CB716205);清华大学基础研究基金资助项目(Jc2003013)

摘　　要：多晶硅是微机电系统(MEMS)表面制造工艺的主要结构材料,其疲劳特性是影响MEMS器件可靠性的一个重要因素,因而,研究多晶硅薄膜材料的疲劳特性具有广泛的实际意义.国外主要采用片上测试方法研究多晶硅薄膜的疲劳特性,本文发展了一种新型片外测试方法,利用压电驱动、电容位移检测和高精度CCD图像实时监控技术,全面测试了多晶硅薄膜的疲劳性能.并通过对实验数据的W e ibu ll方法处理,得到了拉伸状态下带缺口和不带缺口的多晶硅薄膜的应力-循环周次曲线.该方法大大降低了对试件制造工艺性的要求,能够有效地测量薄膜的疲劳性能.Polysilicon is one kind of main materials for surface manufacturing process in micro electromechanical systems （MEMS）. The reliability of MEMS devices is greatly influenced by the fatigue property of polysilicon film. Hence, the research on polysilicon film＇s fatigue property is mostly significant to MEMS applications. The on-chip test method is dominantly used by others to evaluate the fatigue property of polylicon film. Comparatively, a novel out-chip test method utilizing piezoelectric drive, capacitive displacement sensing and high-precision CCD image monitoring is developed. The fatigue property of polysilicon thin film is fully measured in this way. Also the S - N curves of the polysilicon films with and without notch in tensile are obtained by Weibull processing. Using this method, the difficulty of sample manufacturing is greatly decreased and the fatigue property of thin film can be measured effectively.

关 键 词：MEMS 多晶硅 片外测试 疲劳 

分 类 号：TB302.3[一般工业技术—材料科学与工程]