生长温度对L-MBE法制备的ZnO薄膜性能的影响  

Effect of Growth Temperature on the Properties of ZnO Thin Films Prepared by Laser Molecular Beam Epitaxy

作　　者：徐庆安[1] 张景文[1] 杨晓东[1] 巨楷如[2] 贺永宁[2] 侯洵[1] 

机构地区：[1]中国科学院西安光学精密机械研究所瞬态光学技术国家重点实验室 [2]西安交通大学信息光子技术省重点实验室,西安710049

出　　处：《人工晶体学报》2006年第2期248-252,共5页Journal of Synthetic Crystals

基　　金：教育部985工程2期;211工程2期;河南省杰出人才基金(0421001500);教育部博士点基金(20030698008)资助项目

摘　　要：在蓝宝石C面上利用激光分子束外延(L-MBE)的方法,分别在250℃、300℃、350℃、400℃和450℃生长了高度C轴取向的ZnO薄膜。并进行了X射线衍射(XRD)、光致发光(PL)谱的分析。测试结果表明,较低温度时,随着生长温度的升高,薄膜的结晶及发光性能得到提高;但是当温度进一步升高,却有所变差。说明利用L-MBE系统制备ZnO薄膜存在一合适的温度范围,并对此机理进行了深入分析。C-axis highly oriented ZnO thin films were prepared on C-plane sapphire substrates by laser molecular beam epitaxy（L-MBE） at the growth temperature of 250℃, 300℃ ,350℃ ,400℃ and 450℃. X-ray diffraction （XRD）, photoluminescence （PL）spectra were used to analyze the crystalline and optical properties of the films. All measurement results show that the crystalline and optical properties of the films are improved with increase of growth temperature at lower temperature, and decrease as the growth temperature is above 350℃. This phenomenon indicates that there is a growth temperature range in the process of ZnO thin films growth by L-MBE. The reason for this phenomenon is also dicussed.

关 键 词：ZNO薄膜 生长温度 激光分子束外延 X射线衍射 光致发光谱 

分 类 号：TN304.054[电子电信—物理电子学]