低压Ar气氛下用PS/OCS/Si(111)叠层热解制备单晶4H-SiC薄膜及层错缺陷抑制机理  

Growth of Single Crystalline 4H-SiC Film by Pyrogenation of PS/OCS/Si(111) Nappe in Low-pressure Ambient Ar and Mechanism of Suppressing Interfacial Dislocations

作　　者：王玉霞[1] 李赟[1] 陈征[1] 何海平[1] 王建文[1] 邹优鸣[1] 

机构地区：[1]中国科学技术大学材料科学与工程系,合肥230026

出　　处：《人工晶体学报》2006年第2期337-341,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(No.50372063);中国科学院创新项目资助

摘　　要：在一定压力的Ar气氛中对S i(111)衬底上的PS/OCS(硅的有机化合物)凝胶叠层进行热处理,制备出单晶4H-S iC薄膜。用XPS、XRD、TEM、TED和SEM研究了热处理温度和压力对薄膜结晶质量和晶型的影响。XPS分析显示薄膜中C/S i比为1.09。SEM分析表明薄膜的表面平整,S iC/S i(111)界面清晰、无层错缺陷形成。进一步讨论了层错缺陷形成及抑制的机理。A single crystalline 4H-SiC film was grown on the Si substrate by heating polystyrene （PS）/ OCS （organic compound of silicon）bilayer in 5 × 10^4Pa ambient Ar. The influence of temperature and pressure on the crystallinity and polytype of the film was investigated by XPS, XRD, TEM, TED and SEM analysis. XPS analysis revealed that the mole ratio of C and Si of the film was 1.09. Scanning electron microscopy （SEM） results revealed a smooth film surface and a clear interface, and no cavities which were frequently observed in SiC/Si heterostructures grown by many other techniques were formed at the interface. The mechanisms of the formation and suppression of the dislocations were also discussed.

关 键 词：界面层错空洞 溶胶-凝胶 碳化硅 

分 类 号：O77[理学—晶体学]