间歇溅射和分段冷却对ZnO薄膜结构的影响  

Effect of Fitful-sputtering and Sub-sectional Cooling on the Structure of ZnO Thin Film

作　　者：常春荣[1] 李子全[1] 徐芸芸[1] 周衡志[1] 骆心仪[1] 

机构地区：[1]南京航空航天大学材料科学与技术学院,江苏南京210016

出　　处：《电子元件与材料》2006年第5期16-18,共3页Electronic Components And Materials

基　　金：南京大学近代声学国家重点实验室基金资助项目(基金号:0102)

摘　　要：用超高真空射频磁控溅射技术制备了高c轴取向的ZnO薄膜，并用XRD和SEM研究了溅射和冷却方式对ZnO薄膜结构性能和工艺性能的影响。结果表明：与连续溅射相比，间歇溅射可以降低ZnO（002）的晶面间距，晶粒长大致密化，随着间歇时间的延长，薄膜的自优化程度增加；与连续冷却相比，分段冷却对ZnO薄膜的质量影响不大，但可将薄膜的冷却时间，从2．5—3h缩短至1．5h左右，从而提高了薄膜的制备速率。The effects of sputtering and cooling modes on ZnO thin film＇s structural and processing properties were discussed. Highly c-axis oriented ZnO thin films were manufactured by super-high vacuum RF magnetron sputtering technique. The effects of the sputtering and cooling modes on the thin films＇ structure and surface morphology were investigated by the XRD and SEM. Results show that compared with continuous-sputtering mode, the fitful-sputtering mode improves the films＇ quality, because the crystal plain spacings of ZnO （002） reduce and crystal grains grow larger and compacter. ZnO Thin films＇ self-optimization process continues when the interim time is extended. Compared with the normal cooling method, the sub-sectional cooling method has little effect on the ZnO thin film＇s quality but prominently reduces the film＇s refrigerating time, decreasing from 2.5-3 h to about 1.5 h, and enhances the film＇s preparation efficiency.

关 键 词：半导体技术 ZNO薄膜 间歇溅射 分段冷却 

分 类 号：TB383[一般工业技术—材料科学与工程]