超深亚微米PMOSFET的自愈合效应  

Study on self-healing effect in ultra deep submicron PMOSFET's

作　　者：李晶[1] 刘红侠[1] 郝跃[1] 

机构地区：[1]西安电子科技大学微电子学院

出　　处：《物理学报》2006年第5期2508-2512,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60206006);国家高技术研究发展计划(批准号:2004AA1Z1070);教育部重点科技研究项目(批准号:104172)资助的课题~~

摘　　要：主要研究负栅压偏置不稳定性(negative bias temperature instability,NBTI)效应中的自愈合效应,研究了器件阈值电压随着恢复时间和应力时间的恢复规律.研究表明器件的退化可以恢复是由于NBTI应力后界面态被氢钝化.The NBTI effect is studied in this paper with emphasis on its self-healing phenomenon. The recovery of threshold voltage shift with stress times and recovery time are studied. It is found that the recovery is mainly related to the re-passivation by hydrogen of interface states that occurred after the stress is stopped.

关 键 词：负偏置温度不稳定性效应 自愈合效应 应力时间 PMOSFET 

分 类 号：TB383.1[一般工业技术—材料科学与工程]