La_(0.7)Sr_(0.3)MnO_3外延膜厚度引起的电阻率变化  

Thickness dependent variation on the resistivity in epitaxial La_(0.7)Sr_(0.3)MnO_3 thin films

作　　者：孟影[1] 金绍维[1] 

机构地区：[1]安徽大学物理与材料科学学院

出　　处：《安徽大学学报（自然科学版）》2006年第3期58-61,共4页Journal of Anhui University(Natural Science Edition)

基　　金：安徽省教育厅自然科学资金资助项目(2004kj031)

摘　　要：不同厚度的La0.7Sr0.3MnO3(LSMO)外延薄膜被沉积到立方相的LaA lO3(001)单晶衬底上,XRD测试结果显示,LSMO外延膜的结构是单相的,具有与衬底相同的晶格取向;随着膜厚的增加,LSMO外延膜的晶格经历应变到驰豫的变化.电阻测量显示,应变驰豫的薄膜(较厚的薄膜)有较大的电阻率,这与该膜中缺陷浓度增加有关.此外,也对生长在不同单晶衬底上的LSMO外延膜(厚度相同)的结构和电阻进行了对比研究.Epitaxial La0.7Sr0.3MnO3 single crystal films of different thickness values deposited on cubic LaAlO3 （001） single crystal substrates, and X -ray diffraction spectrum shows that LSMO epitaxial films have properties which is from partially strained to fully relaxed with film thickness increasing on the same substrate. Resistivity measurement shows that the relaxed film has higher resistivity than that of the strained film, because the relaxed film contains the high deficiency density. In this paper, however, the relaxed property of the same thickness LSMO epitaxial film grown on the different substrates is also discussed.

关 键 词：外延膜 晶格失配 应变驰豫 缺陷密度 

分 类 号：O513[理学—低温物理]