硅粉在鞘区内的纯化速率模型  

Purity rate model for Si particulates in the sheath

作　　者：许淑慧[1] 王敬义[2] 冯信华[2] 陈正强[1] 

机构地区：[1]广西工学院电子信息与控制工程系,广西柳州545006 [2]华中科技大学电子科学与技术系,湖北武汉430074

出　　处：《华中科技大学学报（自然科学版）》2006年第5期53-55,67,共4页Journal of Huazhong University of Science and Technology(Natural Science Edition)

基　　金：国家自然科学基金资助项目(10265002)

摘　　要：分析了粉粒在反应区的沉降过程,导出了沉降的最大速度及时间的公式,给出了离子在不同位置上的平均动能及粒子通量.还对高能中性粒子在鞘区内的行为进行了详细的分析并得出在不同位置上的平均动能和通量.它可用于计算空间不同位置处包括离子和高能中性粒子的刻蚀速率,计算结果表明高能中性粒子在很大的空间范围内其刻蚀作用大于离子.在阴极电压为2 300 V的情况下,一次沉降的最大刻蚀量可达50层原子、刻蚀速率1.1×1016/(cm2.s-1),这对粉粒在等离子体中的表面刻蚀和纯化都具有一定的意义.The drop process of the particulates in the reaction area was analyzed, and the formulas for the maximum velocity, and the drop time of the particulates were given. The average kinetic energies and the flow rates of ions at different positions were obtained. The behaviors of the neutrals in the sheath were analyzed and their average energies and the flow rates at different positions were also given. The etching rates for both of the ions and the neutrals with high energy at different positions were calculated. The computing results showed that the etching rates of the neutrals were much higher than that of the ions in more volume of the chamber. The maximum etching capacity in each drop would be up to 50 layers of the atoms, that is, the etching rate would be 1. 1 × 10^16/（cm^2 · s^-1）, when Usb is 2 300 V. This is important to the both of the surface etching and the purity in plasmas.

关 键 词：离子刻蚀 等离子体纯化 阴极鞘层 硅粉粒 

分 类 号：TN304[电子电信—物理电子学]