热丝法CVD在75Si－Fe上沉积金刚石膜  

Deposition Diamond Films on 75Si-Fe Substrate by HFCVD

作　　者：高志栋[1] 陈志清[1] 曾效舒[1] 梁吉[1] 魏秉庆[1] 吴德海[1] 

机构地区：[1]清华大学机械系

出　　处：《人工晶体学报》1996年第2期143-146,共4页Journal of Synthetic Crystals

摘　　要：首次在工业７５硅铁上用热丝法气相沉积出了较好的金刚石薄膜。ＳＥＭ、Ｒａｍａｎ检测表明，金刚石薄膜有强烈的选择性生长。初生硅区域［含硅９６ｗｔ．％］金刚石成核生长缓慢，ＦｅＳｉ２区域［含硅５３ｗｔ－％］成核密度约高前者一个数量级以上。本文对上述现象作了初步理论分析。High quality diamond films were deposited on 75Si-Fe substrate by hot filament chemical vapor deposition. The results of SEM and Raman spectroscopy indicated that gorwth of diamond has the intensive selectivity on the surface of 75Si-Fe substrate. Diamond pew more slowly in the region of primary silicon phase L with 96% St (Wt. ) ]. Nucleation density of diamond on the region of FeSi2 phase [with 53% St (wt. )] was higher than the former case by more than an older of magnitude. Preliminary analysis about this phenoma was given.

关 键 词：热丝法 金刚石膜 沉积 CVD 

分 类 号：TB43[一般工业技术]