用于GaInP/GaAs双结叠层太阳电池的MOVPE外延材料  

WAFERS FOR GaInP/GaAs TANDEM SOLAR CELLS BY MOVPE

作　　者：黄子乾[1] 李肖[2] 潘彬[2] 张岚[2] 

机构地区：[1]南京大学物理系,南京210016 [2]南京电子器件研究所,南京210016

出　　处：《太阳能学报》2006年第5期433-435,共3页Acta Energiae Solaris Sinica

摘　　要：采用金属有机化合物气相淀积(MOVPE)技术生长用于GaInP/GaAs双结叠层太阳电池的外延材料。针对材料生长中的隧穿结、p-AlInP层等关键问题,通过对掺杂剂、生长技术及条件的调整与改进,极大地提高了GaInP/GaAs双结叠层太阳电池性能,最高转换效率达到23.8%(AMO,25℃)。The wafers for GaInP/GaAs dual-junction tandem solar cells were grown by MOVPE. Focusing on some key factors, such as the growth of channel junction and p-AlInP layer, the modification and improvements on dopant, growth technique and process were carried out. And as a result, the efficiency of GaInP/GaAs dual-junction tandem solar cells has reached to 23.8 % （AMO, 25℃ ）.

关 键 词：金属有机化合物气相淀积 GaInP/GaAs双结叠层太阳电池 隧穿结 掺杂技术 

分 类 号：TM914[电气工程—电力电子与电力传动]