GaNHEMT栅源与栅漏表面态与电流崩塌相关性探讨  

Comparison of the Gate-Drain and Gate-SourceEffects of GaN HEMT on Current Collapse

作　　者：靳翀[1] 卢盛辉[1] 杜江锋[1] 罗谦[1] 周伟[1] 夏建新[1] 杨谟华[1] 

机构地区：[1]电子科技大学微电子与固体电子学院,成都610054

出　　处：《微纳电子技术》2006年第6期270-272,283,共4页Micronanoelectronic Technology

基　　金：国家自然科学基金(60072004)

摘　　要：基于实验测试数据,综合分析了栅源、栅漏串联电阻增大后电流崩塌I-V曲线变化差异。研究表明:在脉冲测试条件下,RS增大,栅下沟道开启程度减弱,漏电流ID变小;RD增大,栅下沟道漏端等效漏电压减小,膝电压VKNEE变大。该实验结果可望通过RD与RS表征研究导致GaNHEMT电流崩塌的表面态变化。Based on the measurement results, Ⅰ-Ⅴ characteristics before and after gate-souree resistance and gate-drain resistance increased were compared. Increasing of gate-source resistance leads pinch-off of the channel, which makes saturated current decrease. The increasing of gate-drain large resistance reduces effective drain voltage of the consequently. This result is thought to describe the intrinsic channel, knee voltage becomes current collapse after stress quantitively.

关 键 词：电流崩塌 串联电阻 氮化镓高电子迁移率晶体管 表面态 

分 类 号：TN325.3[电子电信—物理电子学]