射频功率HBT自加热效应及补偿方法  

Self-Heating Effect of RF Power HBT and Its Compensation

作　　者：金冬月[1] 张万荣 吴春瑜[1] 

机构地区：[1]辽宁大学物理系,辽宁沈阳110036 [2]北京工业大学电子信息与控制工程学院,北京100022

出　　处：《微电子学》2006年第3期288-291,共4页Microelectronics

基　　金：国家自然科学基金资助项目(60376033);北京市优秀跨世纪人才基金资助项目(67002013200301);模拟集成电路国家重点实验室基金资助项目(51439010804QT0101)

摘　　要：从器件I-V特性的角度,表征了射频功率异质结双极晶体管(HBT)的自加热效应。研究了器件热阻、工作电压、电流增益、发射结价带不连续性(ΔEV)等诸多因素对器件I-V特性的影响。进而研究了为补偿自加热效应所加镇流电阻对热稳定性的改善情况,给出了器件热稳定所需最小镇流电阻(REmin)与这些因素的关系。结果表明,HBT的REmin要小于同质结双极晶体管(BJT)的REmin,因此,射频功率HBT将有更大的输出功率、功率增益和功率附加效率(PAE)。I-V characteristics of the heterojunction bipolar transistor （HBT） are presented to account for self-heating effect of RF power HBT＇s. Effects of various factors, such as thermal resistance, the voltage of collectoremitter, common emitter current gain and the valence-band discontinuity at emitter junction （△Ev）, on the I-V characteristics of the HBT are investigated. Furthermore, the improvement of thermal stability with ballast resistance used for compensating self-heating effect is studied. At the same time, the dependence of the minimum value of ballast resistance （REmin）, above which there is unconditional thermal stability, on the factors mentioned above is given. Results show that REmin of the HBT is smaller than that of the BJT. Therefore, RF power HBT will provide higher output power, power gain, and power-added efficiency （PAE） in an amplifier block.

关 键 词：异质结双极晶体管 自加热效应 I-V特性 镇流电阻 

分 类 号：TN322.8[电子电信—物理电子学]