PCVD法对碳化硅陶瓷的表面改性研究  

Surface Modification of Silicon Carbide Ceramics by PCVD Method

作　　者：谭寿洪[1] 陆忠乾[1] 黄玉珍 沈月华[1] 钟伯强[1] 

机构地区：[1]中国科学院上海硅酸盐研究所

出　　处：《无机材料学报》1996年第1期73-77,共5页Journal of Inorganic Materials

摘　　要：利用等离子辉光放电化学气相沉积技术（ＰＣＶＤ），控制甲烷与磋烷质量流量比、硅烷与氨质量流量比，在碳化硅基体表面分别沉积上无定形碳化硅和氨化硅薄膜，研究其膜的组成、沉积工艺、厚度等对碳化硅陶瓷的强度改性影响．在一定的沉积条件下沉积的碳化硅薄膜可以使基体强度提高２０％达到８５０ＭＰａ，沉积氮化硅薄膜使强度提高３０％达到９００ＭＰａ，改性的效果很明显．Amorphous silicon carbide and silicon nitride films were separately deposited on the surfaCe of silicon carbide ceramics by plasma chemical vapour deposition (PCVD) method. The effect of film composition and thickness as well as deposition technology on ceramics strength was studied. By controlling the flow ratios of methane to silane and silane to ammonia, as well as deposition technology, the strength of silicon carbide ceramics can be modified to reach 850 MPa and 900 MPa, respectively, i.e., increasing by 20% and30% compared with 690 MPa of silicon carbide matrix.

关 键 词：氮化硅 表面改性 PCVD法 碳化硅陶瓷 

分 类 号：TQ174.758[化学工程—陶瓷工业]