薄膜晶体管a－Si：H／a－SiN_x界面研究  

The Study of a-Si:H/a-SiN_x Interface of TFT

作　　者：胡宇飞[1] 孙剑[1] 钟伯强[1] 黄慈祥 潘惠英[1] 

机构地区：[1]中国科学院上海硅酸盐研究所

出　　处：《无机材料学报》1996年第1期183-187,共5页Journal of Inorganic Materials

摘　　要：对比ａ－Ｓｉ：Ｈ／ａ－ＳｉＮｘ界面附近ａ－Ｓｉ：Ｈ和体材料ａ－Ｓｉ：Ｈ的光致发光谱（ＰＬ）发现：随着ＳｉＮｘ中ｘ的增大，ＰＬ峰值向低能方向移动，相对发光强度减小。这是因为由于氮含量的增加，界面晶格不匹配加剧，导致悬挂键密度增多和深能级隙态密度增加。该观点得到Ｃ－Ｖ测试结果的证实。Comparing the photoluminescence spectra of a-St:H near.the a-St:H/SiN. interfaCe with that of the bulk of a-St:H, we found that the photoluminescence spectra of a-Si:H near the interface shifted to the low-energy side, and that its relative luminescence intensity weakened with an increase in nitrogen content of the a-SiN. layer. It is because that the lattice mismatch caused by the increase in nitrogen content of the a--SiN.:H layer leads to the increase of the density of dan'gling bonds and deep-level gap states. The attitude was confirmed by the result of C-V method.

关 键 词：界面 薄膜晶体管 非晶硅 氮化硅 

分 类 号：TN321.5[电子电信—物理电子学]