多场极板LEDMOS表面电场和导通电阻研究  

Research on the Surface Electrical Field and Specific On-resistance of LEDMOS with Multiple Field Plates

作　　者：孙伟锋[1] 易扬波[1] 陆生礼[1] 

机构地区：[1]东南大学国家ASIC系统工程技术研究中心,南京210096

出　　处：《固体电子学研究与进展》2006年第2期157-161,共5页Research & Progress of SSE

基　　金：国家"863"计划资助(NO.2004AA1Z1060);江苏省高等学校研究生创新计划项目资助(NO.XM04-30);东南大学优秀博士学位论文基金项目资助(NO.YBJJ0413)

摘　　要：研究了常规LEDM O S,带有两块多晶硅场极板LEDM O S以及带有两块多晶硅场极板和一块铝场极板的LEDM O S表面电场分布情况,重点研究了多块场极板在不同的外加电压下,三种LEDM O S的表面峰值电场和导通电阻的变化情况。模拟结果和流水实验结果都表明:多块场极板是提高LEDM O S击穿电压的一种有效方法,而且场极板对导通电阻的影响很小。研究结果还表明:由于金属铝引线下面的氧化层很厚,所以铝引线几乎不会影响到LEDM O S的击穿特性。In this paper,the surface electrical field distributions along the drift regions of the conventional LEDMOS,TPFP LEDMOS and M-TPFP LEDMOS were presented by MEDICI respectively. The electrical field peaks and the specific on-resistance have been discussed in details. In terms of the analysis and discussion results on the changes of the electrical field peaks of the three kinds of the high voltage LEDMOS,a method to improve the breakdown capability of the high voltage BS LEDMOS was given. The analysis results also proved that the metal wires crossed the LEDMOS was given. The analysis results also proved that the metal wires crossed the LEDMOS wouldn＇t degrade the breakdown capability of the high voltage LEDMOS for the thick oxide layer. The experimental results on the specific on-resistance also show that the on-resistance of the TPFP and M-TPFP LEDMOS changed little compared with that of the conventional LEDMOS.

关 键 词：表面电场 导通电阻 击穿电压 场极板 

分 类 号：TN710[电子电信—电路与系统] TN432