ZnO/P-Si接触及其温度特性  

The contact and temperature characteristics of ZnO /P-Si

作　　者：刘磁辉[1] 刘秉策[2] 马泽宇[1] 段理[1] 付竹西[1] 

机构地区：[1]中国科技大学物理系,安徽合肥230026 [2]合肥工业大学理学院,安徽合肥230026

出　　处：《功能材料》2006年第6期857-860,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(50472009;10474091);中国科学院知识创新方向性课题资助项目(KJCXZ-SW-04-02)

摘　　要：用射频磁控溅射在硅衬底上淀积ZnO薄膜,随后进行I-V-T测量。实验结果显示硅基氧化锌接触具有异质结特性,异质结的电流输运机制为热发射和电流隧穿。用I-V-T测量的结果拟合计算了势垒高度和理想因子,结果发现ZnO/P-Si势垒高度随温度降低而减小理想因子则升高。异质结的这种反常的随温度变化的关系可以用肖特基势垒不均匀性理论解释。样品经Air^800℃热退火后势垒高度与未退火相比上升,说明热退火改善了氧化锌薄膜的结晶质量,减少了界面态影响。Al-doped zinc-oxide （ZnO ： A1） films are obtained hy RF magnetron sputtering, Based on an investigation of electrical properties of the films using I-V-T measurement, it is shown that the ZnO contact with the Si substrate has a property of heterogeneity-junction. The mechanisms of the electric current transport in the heterogeneity-junction are thermoemission and tunnel. We have found the potential of ZnO/P-Si decrease by temperature fallen while the ideality factor increases by calculating the result obtained through I-V-T measurement. This abnormal behavioral of heterogeneity-junction can be explained by Schottky potential asymmetrical. Compared with unanneal samples, the samples annealed in Air～800℃ have a higher potential. It has show that anneal can improve the quality of the ZnO films, and reduce the effect of interface state.

关 键 词：氧化锌 异质结 势垒 温度特性 

分 类 号：O472.4[理学—半导体物理]