金属铝诱导低温晶化非晶硅薄膜研究  

Study on Aluminum-induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

作　　者：杨晟[1] 夏冬林[1] 徐慢[1] 赵修建[1] 

机构地区：[1]武汉理工大学硅酸盐材料工程教育部重点实验室,武汉430070

出　　处：《武汉理工大学学报》2006年第6期7-9,共3页Journal of Wuhan University of Technology

基　　金：硅酸盐材料工程教育部重点实验室(武汉理工大学)开放课题(SYSJJ2005-12)

摘　　要：采用PECVD法在镀铝的玻璃衬底上生长非晶硅薄膜,然后样品在氮气气氛下温度为500℃的条件下退火,成功地将非晶硅薄膜转化为多晶硅薄膜。利用XRD、RAMAN、SEM等测试方法,研究了不同铝膜厚度的非晶硅薄膜诱导晶化的过程。实验结果表明,铝膜厚度较厚的样品在500℃下退火1 h晶化为较好的多晶硅薄膜,而铝膜较薄的样品热处理后仍为非晶硅薄膜。Amorphous silicon（a-Si）thin films were deposited on aluminum-coated glass substrate by PECVD and then crystallized by aluminum-induced crystallization（AIC） at 500 ℃ . The AIC poly-Si thin films were characterized by XRI）, Raman and SEM. The results indicated the thickness of aluminum was found to play a critical role in crystallinity. The sample of thicker AI layers gave rise to better crystallinity annealed at 500℃ for 1 h, while the sample of thinner AI layers remain amorphous structure at the same annealing conditions.

关 键 词：铝诱导晶化 低温晶化 非晶硅薄膜 多晶硅薄膜 

分 类 号：TN304[电子电信—物理电子学]