低温快速热退火晶化制备多晶硅薄膜  

Preparing polycrystalline silion thin film by rapid thermal annealing(RTA) at lower temperature

作　　者：王红娟[1] 卢景霄[1] 刘萍[1] 王生钊[1] 张宇翔[1] 张丽伟[1] 陈永生[1] 

机构地区：[1]郑州大学教育部材料物理重点实验室,河南郑州450052

出　　处：《可再生能源》2006年第3期13-15,共3页Renewable Energy Resources

摘　　要：利用PECVD设备沉积非晶硅薄膜,然后放入特制的快速热退火炉中进行退火。利用X射线衍射仪(XRD)分析退火后的薄膜晶体结构,用电导率测试仪测试其暗电导率。研究结果表明,利用快速热退火晶化能够使非晶硅薄膜在较低温度下,在较短时间内发生晶化。The a-Si：H thin films were deposited by PECVD and then were annealed in tailor-made RTA furnace.The microstrncture and electric property of thin films were investigated by XRD and dark conductivity measurements. The results show that a-Si：H thin films had been annealed at lower temperature and shorter time by rapid thermal annealing（RTA）.

关 键 词：快速热退火 非晶硅薄膜 暗电导 

分 类 号：TN304.12[电子电信—物理电子学] TG139.8[一般工业技术—材料科学与工程]