硅基微电感的研究  

The research of inductors on a Si substrate

作　　者：李点美[1] 王璐[1] 杨志[1] 温殿忠[1] 

机构地区：[1]黑龙江大学集成电路重点实验室,黑龙江哈尔滨150080

出　　处：《黑龙江大学自然科学学报》2006年第3期354-358,共5页Journal of Natural Science of Heilongjiang University

基　　金：国家自然科学基金资助项目(60076027)

摘　　要：阐述了一种在硅杯表面采用浓硼扩散区与镀金属膜形成的欧姆接触电极作为内引线的硅基电感的新制造方法,提出了在硅杯背面用激光器打孔以减薄衬底厚度,从而使电感的Q值得到提高的一种方案,并应用目前普遍采用的电感模型,利用Ansys有限元软件中的电磁分析模块模拟了电感几何参数与磁感应强度、电感值的关系。结果表明,该方法具有制造工艺简单、与IC工艺相兼容的优点,有广泛的应用领域。It is introduced a new kind of method of inductor fabrication, whose internal down - lead adopts ohm contact formed by the boron heavily dosed region and the Au evaporated. And the authours put forward a program to increase Q - factors, that is to dig holes on the back of silicon by laser for further reducing substrate. The relations of geometry parameter versus Magnetic Flux Density and inductance are analyzed by Ansys soft on the bases of the prevalent mold of inductor. As conclusion shows, this method has the advantages of simple technology, compatible of CMOS technology, and has extensive future.

关 键 词：MEMS 浓硼扩散区 内引线 激光打孔 硅基微电感 

分 类 号：TN3[电子电信—物理电子学]